Part Number Hot Search : 
100N08 100000 94C10 14060 90FD9 CY23S05 11004 MC33076P
Product Description
Full Text Search
 

To Download SPD15N06S2L-64 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 SPD15N06S2L-64 OptiMOS(R) Power-Transistor
Feature
* N-Channel
Product Summary VDS R DS(on) ID 55 64 19
P- TO252 -3-11
V m A
* Enhancement mode * Logic Level * 175C operating temperature * Avalanche rated * dv/dt rated
Type SPD15N06S2L-64
Package Ordering Code P- TO252 -3-11 Q67060-S7425
Marking 2N06L64
Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Continuous drain current
TC=25C
Symbol ID
Value 19 13
Unit A
Pulsed drain current
TC=25C
ID puls EAS EAR dv/dt VGS Ptot T j , Tstg
76 43 4.7 6 20 47 -55... +175 55/175/56 kV/s V W C mJ
Avalanche energy, single pulse
ID=15A, V DD=25V, RGS=25
Repetitive avalanche energy, limited by Tjmax 1) Reverse diode dv/dt
IS=15A, V DS=44V, di/dt=200A/s, Tjmax=175C
Gate source voltage Power dissipation
TC=25C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
Page 1
2003-05-09
SPD15N06S2L-64
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
@ min. footprint @ 6 cm2 cooling area
2)
Symbol min. RthJC RthJA RthJA -
Values typ. 2.14 max. 3.2 100 75 50
Unit
K/W
Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage
V GS=0V, ID=1mA
Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) 55 1.2
Values typ. 1.6 max. 2
Unit
V
Gate threshold voltage, VGS = V DS
ID=14A
Zero gate voltage drain current
V DS=55V, VGS=0V, Tj=25C V DS=55V, VGS=0V, Tj=125C
A 0.01 1 1 60 46 1 100 100 85 64 nA m
Gate-source leakage current
V GS=20V, VDS=0V
Drain-source on-state resistance
V GS=4.5V, I D=8A
Drain-source on-state resistance
V GS=10V, I D=8A
1Defined by design. Not subject to production test. 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2
2003-05-09
SPD15N06S2L-64
Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time
Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg
VDD =44V, ID =19A, VGS =0 to 10V VDD =44V, ID =19A
Symbol
Conditions min.
Values typ. 15 355 78 29 4.4 17 25 16 max. 445 105 43 6.6 26 38 24
Unit
gfs Ciss Coss Crss td(on) tr td(off) tf
VDS 2*ID *RDS(on)max, ID =13A VGS =0V, VDS =25V, f=1MHz
7.5 -
S pF
VDD =30V, VGS =10V, ID =15A, RG =20
ns
-
1.2 3 10 3.7
1.5 5 13 -
nC
V(plateau) VDD =44V, ID =19A
V
Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge ISM VSD trr Qrr
VGS =0V, IF =15A VR =30V, IF =lS , diF /dt=100A/s
IS
TC=25C
-
0.93 34 32
19 76 1.3 42 40
A
V ns nC
Page 3
2003-05-09
SPD15N06S2L-64
1 Power dissipation Ptot = f (TC) parameter: VGS 4 V
55
SPD15N06S2L-64
2 Drain current ID = f (T C) parameter: VGS 10 V
20
SPD15N06S2L-64
W
45 40
A
16 14
P tot
ID
100 120 140 160 C 190
35 30
12 10
25 8 20 15 10 5 0 0 20 40 60 80 6 4 2 0 0 20 40 60 80
100 120 140 160 C 190
TC
TC
3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC = 25 C
/I
D
4 Max. transient thermal impedance Z thJC = f (t p) parameter : D = t p/T
t = 4.1s p
10
2 SPD15N06S2L-64
DS
10
1 SPD15N06S2L-64
K/W
10 s
A
R
DS (on )
=
V
10
0
10
1 100 s
Z thJC
ID
10
-1
1 ms 0
D = 0.50 10
-2
0.20 0.10 single pulse 0.05 0.02 0.01
10
10
-3
10
-1
10
-1
10
0
10
1
V
10
2
10
-4
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
VDS
Page 4
tp
2003-05-09
SPD15N06S2L-64
5 Typ. output characteristic ID = f (V DS); T j=25C parameter: tp = 80 s
50
SPD15N06S2L-64
6 Typ. drain-source on resistance RDS(on) = f (I D) parameter: VGS
m
VGS [V]
Ptot = 47W
210
SPD15N06S2L-64
A
a 3.0 3.3 3.5 3.8 4.0 4.3 4.5 10.0
b
c
d
e
f
g
180 160 140 120 100 80 60
40 35
h
b c d e
30 25
g
f g h
20 15 10
c
f e d
R DS(on)
ID
h
40
b a
5 0 0 0.5 1 1.5 2 2.5 3 3.5
20 0 5 0
VGS [V] =
b 3.3 c 3.5 d 3.8 e 4.0 f 4.3 g h 4.5 10.0
4
V
4
8
12
16
20
A
26
VDS
ID
7 Typ. transfer characteristics ID= f ( V GS ); V DS 2 x ID x RDS(on)max parameter: tp = 80 s
30
8 Typ. forward transconductance g fs = f(I D); T j=25C parameter: g fs
18
S A
14 20 12 10 15 8 10 6 4 5 2 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0 0 2 4 6 8 10 12 14
V5 VGS
g fs
ID
A 18 ID
Page 5
2003-05-09
SPD15N06S2L-64
9 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 8 A, V GS = 10 V
210
SPD15N06S2L-64
10 Typ. gate threshold voltage VGS(th) = f (T j) parameter: VGS = VDS
2.5
m
180 160 140 120 100 80 60 typ 40 20 0 -60 0 -60 0.5 98% 1
V V GS(th)
R DS(on)
70 A
1.5
14 A
-20
20
60
100
140 C
200
-20
20
60
100
C Tj
180
Tj
11 Typ. capacitances C = f (V DS) parameter: VGS=0V, f=1 MHz
10
3
12 Forward character. of reverse diode IF = f (V SD) parameter: T j , tp = 80 s
10
2 SPD15N06S2L-64
pF
Ciss
A
10
1
C
10
2
Coss
IF Crss
10
0
T j = 25 C typ T j = 175 C typ T j = 25 C (98%) T j = 175 C (98%)
10
1
10 5 10 15 20
-1
0
V VDS
30
0
0.4
0.8
1.2
1.6
2
2.4 V
3
VSD
Page 6
2003-05-09
SPD15N06S2L-64
13 Typ. avalanche energy E AS = f (T j) par.: I D=15A, VDD = 25 V, RGS = 25
45
14 Typ. gate charge VGS = f (QGate) parameter: ID = 19 A pulsed
16
SPD15N06S2L-64
mJ
V
35
12
E AS
30 25
VGS
10
0,2 VDS max
0,8 VDS max
8 20 6 15 10 5 0 25 4
2
45
65
85
105
125
145
C 185 Tj
0 0 2 4 6 8 10 12
nC
16
QGate
15 Drain-source breakdown voltage V(BR)DSS = f (Tj) parameter: ID=10 mA
66
SPD15N06S2L-64
V
V(BR)DSS
62
60
58
56
54
52
50 -60
-20
20
60
100
140 C
200
Tj
Page 7
2003-05-09
SPD15N06S2L-64
Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Further information Please notice that the part number is BSPD15N06S2L-64, for simplicity the device is referred to by the term SPD15N06S2L-64 throughout this documentation.
Page 8
2003-05-09


▲Up To Search▲   

 
Price & Availability of SPD15N06S2L-64

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X